ECOD: domain e8t1bC1

Domain ID e8t1bC1

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A: alpha complex topology
X: Voltage-gated ion channels
H: Voltage-gated ion channels
T: Voltage-gated ion channels
F: YVC1_C

UID:	003105921
ID:	e8t1bC1
Source structure type:	experimental structure
ECOD representative type:	Automatic domain
Parent:	e5e1jA1
Range:	C:453-638,C:660-755
PDB:	8t1b
PDB Description:

Domain
In chain context
In PDB context

Structure of domain e8t1bC1

Domains in the same protein:

e8t1bC1	C:453-638,C:660-755	Voltage-gated ion channels	Voltage-gated ion channels	Voltage-gated ion channels
e8t1bC2	C:148-452,C:756-803	Repetitive alpha hairpins	Ankyrin repeat	Ankyrin repeat

Domains in the same PDB:

e8t1bA1	A:148-452,A:756-803	Repetitive alpha hairpins	Ankyrin repeat	Ankyrin repeat
e8t1bA2	A:453-638,A:660-755	Voltage-gated ion channels	Voltage-gated ion channels	Voltage-gated ion channels
e8t1bB1	B:148-452,B:756-803	Repetitive alpha hairpins	Ankyrin repeat	Ankyrin repeat
e8t1bB2	B:453-638,B:660-755	Voltage-gated ion channels	Voltage-gated ion channels	Voltage-gated ion channels
e8t1bC1	C:453-638,C:660-755	Voltage-gated ion channels	Voltage-gated ion channels	Voltage-gated ion channels
e8t1bC2	C:148-452,C:756-803	Repetitive alpha hairpins	Ankyrin repeat	Ankyrin repeat
e8t1bD1	D:148-452,D:756-803	Repetitive alpha hairpins	Ankyrin repeat	Ankyrin repeat
e8t1bD2	D:453-638,D:660-755	Voltage-gated ion channels	Voltage-gated ion channels	Voltage-gated ion channels